2N657S
2N657S
Active
Description:  POWER BJT
Manufacturer:  Microchip Technology
Datasheet:   2N657S Datasheet
History Price: $38.83500
In Stock: 12800
2N657S vs 2N6725
Part No
Series
-
-
Packaging
Bulk
Bag
Status
Active
Active
Transistor Type
NPN
NPN - Darlington
Current - Collector (Ic) (Max)
-
1 A
Voltage - Collector Emitter Breakdown (Max)
40 V
50 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
1.5V @ 2mA, 1A
Current - Collector Cutoff (Max)
10μA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
4000 @ 1A, 5V
Power - Max
600 mW
1 W
Frequency - Transition
-
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-
Mounting Type
Through Hole
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
TO-237AA
Supplier Device Package
TO-5AA
TO-237