2N657S
2N657S
Active
Description:  POWER BJT
Manufacturer:  Microchip Technology
Datasheet:   2N657S Datasheet
History Price: $38.83500
In Stock: 12800
2N657S vs 2N6718-AP
Part No
Series
-
-
Packaging
Bulk
Tape & Box (TB)
Status
Active
Obsolete
Transistor Type
NPN
NPN
Current - Collector (Ic) (Max)
-
1 A
Voltage - Collector Emitter Breakdown (Max)
40 V
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
500mV @ 10mA, 250mA
Current - Collector Cutoff (Max)
10μA (ICBO)
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
80 @ 50mA, 1V
Power - Max
600 mW
625 mW
Frequency - Transition
-
50MHz
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-5AA
TO-92