2N657S
2N657S
Active
Description:  POWER BJT
Manufacturer:  Microchip Technology
Datasheet:   2N657S Datasheet
History Price: $38.83500
In Stock: 12800
2N657S vs 2N6668
Part No
Series
-
-
Packaging
Bulk
Bag
Status
Active
Active
Transistor Type
NPN
PNP - Darlington
Current - Collector (Ic) (Max)
-
10 A
Voltage - Collector Emitter Breakdown (Max)
40 V
80 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
3V @ 100mA, 10A
Current - Collector Cutoff (Max)
10μA (ICBO)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
1000 @ 5A, 3V
Power - Max
600 mW
65 W
Frequency - Transition
-
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
TO-220-3
Supplier Device Package
TO-5AA
TO-220