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Transistors - Bipolar (BJT) - RF
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2N3496
Active
Transistors - Bipolar (BJT) - RF
Description:
SMALL-SIGNAL BJT
Manufacturer:
Microchip Technology
Datasheet:
2N3496 Datasheet
History Price: $32.40000
In Stock: 45000
Specification
PDF Datasheet
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2N3496 vs 2N3495
Part No
2N3496
2N3495
Category
Transistors - Bipolar (BJT) - RF
Transistors - Bipolar (BJT) - RF
Manufacturer
Microchip Technology
Microchip Technology
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
PNP
PNP
Voltage - Collector Emitter Breakdown (Max)
80V
120V
Frequency - Transition
250MHz
150MHz
Noise Figure (dB Typ @ f)
-
-
Gain
-
-
Power - Max
600mW
400mW
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 100mA, 10V
40 @ 50mA, 10V
Current - Collector (Ic) (Max)
100mA
100mA
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-18 (TO-206AA)
TO-5AA
